Přístupnostní navigace
E-application
Search Search Close
Publication detail
AHMED, M.
Original Title
Alternating current thin film electroluminescent device characterization
Type
dissertation
Language
English
Original Abstract
The objective of this thesis is to study the optical and electrical characterization of Alternating-Current Thin-Film ElectroLuminescent (ACTFEL) devices, and specifically the aging process of phosphor materials that comprise the ACTFEL display in an effort to improve the overall performance of the primary phosphor colors in terms of brightness, efficiency and stability. The study of the aging characteristics of evaporated and atomic layer epitaxy ZnS:Mn phosphors has been undertaken by monitoring the luminance-voltage (L-V) internal charge-phosphor field (Q-Fp) and capacitance-voltage (C-V) electrical characteristics at in selected time intervals during aging. Short-term and long-term ACTFEL aging studies has been provided and an attempt to visualize locally the structure of phosphor with a subwavelenght resolution using Scanning near-field optical microscope (SNOM) has also been presented. The practical case of a green Zn2GeO4:Mn (2% Mn) ACTFEL device operated at 50 Hz has been studied and a luminance stability by a measurement of luminance-voltage (L-V) and luminous efficiency-voltage ( -V) characteristics evaluated.
Keywords
alternating-current thin-film electroluminescence (ACTFEL), electroluminescent displays, phospors, ZnSMn2, green Zn2GeO4Mn, ZnSMn doped with KCl, topography, electrical characteristics, transport characteristics, optical characteristics, brightness and threshold voltage, photo-induced charge, photo-induced luminance, temperature and thickness effects, aging process, aging analysis, aging trends, Scanning Near-field Optical Microscopy, measurement
Authors
RIV year
2008
Released
7. 5. 2008
Publisher
Vutium
Location
Brno
Pages from
1
Pages to
27
Pages count
BibTex
@phdthesis{BUT67059, author="Mustafa M. Abdalla {Ahmed}", title="Alternating current thin film electroluminescent device characterization", publisher="Vutium", address="Brno", pages="1--27", year="2008" }