Low Frequency Noise of Tantalum Capacitors

conference paper

English

A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capcitors in order to characterise their quality and reliabilityThe moedl of ta - ta2O5 - MnO2 MIS structure was used to give physical interpretation of VA characteristic noth in normal and reverse modes. The self-healing process based on high temperature MnO2- Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes.

Noise, tantalum capcitors, self-healing, reliability

ŠIKULA, J., HLÁVKA, J., PAVELKA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.

2001

1. 1. 2001

Electronic Components Institute Internationale Ltd.

Kodaň, Dánsko

81

84

4