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ŠIKULA, J., PAVELKA, J., HLÁVKA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.
Original Title
The Tantalum Capacitor as a MIS Structure in Reverse Mode
Type
conference paper
Language
English
Original Abstract
The charge carrier transport mechanisms in a tantalum capacitor are discussed and VA characteristics both in normal and reverse mode are explained on the basis of metal (Ta) - insulator (Ta2O5) - semiconductor (MnO2) MIS structure model. The leakage current temperature dependencies were measured to determine energy band parameters.
Key words in English
tantalum capacitor, MIS structure, leakage current
Authors
RIV year
2001
Released
1. 1. 2001
Publisher
Components Technology Institute, Inc.
Location
Huntsville, Alabama, USA
ISBN
0887-7491
Book
Proceedings of 21st Capacitor and Resistor technology Symposium CARTS US 2001
Pages from
289
Pages to
292
Pages count
4
BibTex
@inproceedings{BUT6872, author="Josef {Šikula} and Jan {Pavelka} and Jan {Hlávka} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}", title="The Tantalum Capacitor as a MIS Structure in Reverse Mode", booktitle="Proceedings of 21st Capacitor and Resistor technology Symposium CARTS US 2001", year="2001", pages="4", publisher="Components Technology Institute, Inc.", address="Huntsville, Alabama, USA", isbn="0887-7491" }