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BENEŠOVÁ, M., TOMÁNEK, P., OTEVŘELOVÁ, D., DOBIS, P., GRMELA, L.
Original Title
Near field scanning optical microscopy as an imaging tool for carrier process in silicon
Type
conference paper
Language
English
Original Abstract
Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.
Keywords
excess carrier lifetime, recombination, dynamics, near-field scanning optical microscopy, local measurement, superresolution
Authors
RIV year
2003
Released
1. 6. 2003
Publisher
Process Engineering Publisher
Location
Praha
ISBN
80-86059-35-9
Book
Advanced engineering design
Pages from
F1.3
Pages to
F1.7
Pages count
5