Publication detail

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

BENEŠOVÁ, M., TOMÁNEK, P., OTEVŘELOVÁ, D., DOBIS, P., GRMELA, L.

Original Title

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Type

conference paper

Language

English

Original Abstract

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

Keywords

excess carrier lifetime, recombination, dynamics, near-field scanning optical microscopy, local measurement, superresolution

Authors

BENEŠOVÁ, M., TOMÁNEK, P., OTEVŘELOVÁ, D., DOBIS, P., GRMELA, L.

RIV year

2003

Released

1. 6. 2003

Publisher

Process Engineering Publisher

Location

Praha

ISBN

80-86059-35-9

Book

Advanced engineering design

Pages from

F1.3

Pages to

F1.7

Pages count

5