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BILALOV, B. KARDASHOVA, G. GITIKCHIEV, M. SOBOLA, D. ABDURAZAKOV, A.
Original Title
Magnetron sputtering of (SiC)1-x(AlN)x solid solution thin films
English Title
Type
conference paper
Language
Russian
Original Abstract
The theoretical estimations of thermalization zone length of the sprayed atoms and distance from a target to the conditional anode for the magnetron sputtering process are presented in this work. The calculations show that the thermalization of sprayed atoms of SiC - AlN target occurs on distance about 4 cm from a target at the pressure of Ar working gas 6 -12 Pa
English abstract
Keywords
sputtering rate, target composition, substrate temperature, growth rate, thermalization zone
Key words in English
Authors
BILALOV, B.; KARDASHOVA, G.; GITIKCHIEV, M.; SOBOLA, D.; ABDURAZAKOV, A.
Released
23. 3. 2011
Publisher
State Dagestan University
Location
Machachkala
Pages from
138
Pages to
139
Pages count
2
BibTex
@inproceedings{BUT76540, author="Bilal {Bilalov} and Gulnara {Kardashova} and Magomed {Gitikchiev} and Dinara {Sobola} and Abdula {Abdurazakov}", title="Magnetron sputtering of (SiC)1-x(AlN)x solid solution thin films", booktitle="International conference INNOVATIKA 2011", year="2011", number="23.03.2011", pages="138--139", publisher="State Dagestan University", address="Machachkala" }