Publication detail

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

LÉTAL, P., BRÜSTLOVÁ, J., TOMÁNEK, P., DOBIS, P., GRMELA, L.

Original Title

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

Type

conference paper

Language

English

Original Abstract

Locally resolved topography of semiconductor surface and jonction has been investigated and first results presnted.

Keywords

near-field optics, spectroscopy, interface, semiconductor, superresolution

Authors

LÉTAL, P., BRÜSTLOVÁ, J., TOMÁNEK, P., DOBIS, P., GRMELA, L.

RIV year

2003

Released

10. 9. 1998

Location

Brno

ISBN

80-214-1198-8

Book

Proc. of 5th Int.Conf. Electronic devices and systems 1998

Pages from

173

Pages to

176

Pages count

4

BibTex

@inproceedings{BUT7998,
  author="Petr {Létal} and Jitka {Brüstlová} and Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela}",
  title="Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)",
  booktitle="Proc. of 5th Int.Conf. Electronic devices and systems 1998",
  year="1998",
  pages="4",
  address="Brno",
  isbn="80-214-1198-8"
}