Publication detail

Peculiarities of the obtaining process of silicon carbide and aluminum nitride

BILALOV, B. KARDASHOVA, G. ABDURAZAKOV, A. SOBOLA, D. ARKHIPOV, A.

Original Title

Peculiarities of the obtaining process of silicon carbide and aluminum nitride

English Title

Peculiarities of the obtaining process of silicon carbide and aluminum nitride

Type

conference paper

Language

Russian

Original Abstract

Obtaining of solid solutions of SiC-AlN system with predictable composition and with expected physical-chemical properties is only possible on the basis of whole and detail investigation of interaction character between components of solid solution and by study of connection between composition and properties. The objects of this study are samples of thin films of aluminum nitride and its solid solutions formatted on silicon carbide substrates by sublimation of source of polycrystalline (SiC)1-x(AlN)x solid solution (x = 0.25 and x=1) at 2100-2300 K in nitrogen atmosphere and at atmosphere pressure.

English abstract

Obtaining of solid solutions of SiC-AlN system with predictable composition and with expected physical-chemical properties is only possible on the basis of whole and detail investigation of interaction character between components of solid solution and by study of connection between composition and properties. The objects of this study are samples of thin films of aluminum nitride and its solid solutions formatted on silicon carbide substrates by sublimation of source of polycrystalline (SiC)1-x(AlN)x solid solution (x = 0.25 and x=1) at 2100-2300 K in nitrogen atmosphere and at atmosphere pressure.

Keywords

sublimation, solid solution, thin layer, source, target

Key words in English

sublimation, solid solution, thin layer, target

Authors

BILALOV, B.; KARDASHOVA, G.; ABDURAZAKOV, A.; SOBOLA, D.; ARKHIPOV, A.

RIV year

2011

Released

4. 5. 2011

Publisher

Southwest state university

Location

Kursk

ISBN

978-5-7681-0642-3

Book

Proceedings of Internationalscientific conference: Advanced technologies, equipment and analytical systems for material sciences and nanomaterials

Edition

K.V.Kozitov

Edition number

4.05.2011

Pages from

829

Pages to

831

Pages count

3

BibTex

@inproceedings{BUT89667,
  author="Bilal {Bilalov} and Gulnara {Kardashova} and Abdula {Abdurazakov} and Dinara {Sobola} and Alexandr {Arkhipov}",
  title="Peculiarities of the obtaining process of silicon carbide and aluminum nitride",
  booktitle="Proceedings of Internationalscientific conference: Advanced technologies, equipment and analytical systems for material sciences and nanomaterials",
  year="2011",
  series="K.V.Kozitov",
  number="4.05.2011",
  pages="829--831",
  publisher="Southwest state university",
  address="Kursk",
  isbn="978-5-7681-0642-3"
}