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DALLAEVA, D.
Original Title
Morphology and structural investigation of silicon carbide layers formated by sublimation
Type
conference paper
Language
English
Original Abstract
Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions.
Keywords
structural properties, lattice perfection, epilayer, substrate, epitaxy
Authors
RIV year
2012
Released
26. 4. 2012
Publisher
LITERA Brno, Tabor 43a, 612 00 Brno
Location
Brno
ISBN
978-80-214-4462-1
Book
Proceedings of the 18th Conference STUDENT EEICT, vol. 3
Edition
vol.3
Pages from
239
Pages to
243
Pages count
5
BibTex
@inproceedings{BUT91751, author="Dinara {Sobola}", title="Morphology and structural investigation of silicon carbide layers formated by sublimation", booktitle="Proceedings of the 18th Conference STUDENT EEICT, vol. 3", year="2012", series="vol.3", pages="239--243", publisher="LITERA Brno, Tabor 43a, 612 00 Brno", address="Brno", isbn="978-80-214-4462-1" }