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DALLAEVA, D. BILALOV, B. SAFARALIEV, G. KARDASHOVA, G. TOMÁNEK, P. ARKHIPOV, A.
Original Title
Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target
Type
conference paper
Language
English
Original Abstract
This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account.
Keywords
ion-plasma sputtering, sputtering velocity, growth rate, ion energy
Authors
DALLAEVA, D.; BILALOV, B.; SAFARALIEV, G.; KARDASHOVA, G.; TOMÁNEK, P.; ARKHIPOV, A.
RIV year
2012
Released
28. 6. 2012
Publisher
Vysoke uceni technicke v Brne
Location
LITERA, Tabor 43a, 61200 Brno
ISBN
978-80-214-4539-0
Book
IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.
Edition
FIRST
Pages from
49
Pages to
53
Pages count
5
BibTex
@inproceedings{BUT93002, author="Dinara {Sobola} and Bilal {Bilalov} and Gadjimet {Safaraliev} and Gulnara {Kardashova} and Pavel {Tománek} and Alexandr {Arkhipov}", title="Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target", booktitle="IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.", year="2012", series="FIRST", pages="49--53", publisher="Vysoke uceni technicke v Brne", address="LITERA, Tabor 43a, 61200 Brno", isbn="978-80-214-4539-0" }