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ŠICNER, J. KOKTAVÝ, P. MACKŮ, R.
Original Title
MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS
Type
conference paper
Language
English
Original Abstract
The article deals with the diagnostics application to local defects on the edge in silicon solar cells by monitoring their optical and thermal activities during electrical excitation. During the measurement is solar cell connected to a voltage source in the reverse direction. Radiation generated from reverse-biased pn junction defects is used to study local properties. It proves to be useful to measure surface radiation and to make light spots (defects) localization. By the same way is possible to measure the radiation intensity and optical spectrum.
Keywords
Solar cell, local defect, nondestructive testing.
Authors
ŠICNER, J.; KOKTAVÝ, P.; MACKŮ, R.
RIV year
2012
Released
28. 6. 2012
Publisher
LITERA
Location
Brno
ISBN
978-80-214-4539-0
Book
Electronic Devices and Systems IMAPS CS International Conference 2012
Edition
1
Edition number
Pages from
95
Pages to
100
Pages count
6
BibTex
@inproceedings{BUT93069, author="Jiří {Šicner} and Pavel {Koktavý} and Robert {Macků}", title="MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS", booktitle="Electronic Devices and Systems IMAPS CS International Conference 2012", year="2012", series="1", number="1", pages="95--100", publisher="LITERA", address="Brno", isbn="978-80-214-4539-0" }