Nanoelectronic device structures at terahertz frequency

Nanoelectronic device structures at terahertz frequency

Paper in proceedings (conference paper)

Potential barriers of different types (rectangular, triangle, parabolic) with a dc-bias and a small ac-signal in the THz-frequency band are investigated in this paper. The height of the potential barrier is modulated by the high frequency signal. If electrons penetrate through the barrier they can emit or absorb usually one or even more energy quanta, thus the electron wave function behind the barrier is a superposition of different harmonics. If the harmonics of the electron current density are known the complex admittance and other electrical parameters of the structure can be found.

Potential barriers of different types (rectangular, triangle, parabolic) with a dc-bias and a small ac-signal in the THz-frequency band are investigated in this paper. The height of the potential barrier is modulated by the high frequency signal. If electrons penetrate through the barrier they can emit or absorb usually one or even more energy quanta, thus the electron wave function behind the barrier is a superposition of different harmonics. If the harmonics of the electron current density are known the complex admittance and other electrical parameters of the structure can be found.

Nanoelectronic, terahertz, potential barrier, transmittance, Schrödinger equation

Nanoelectronic, terahertz, potential barrier, transmittance, Schrödinger equation

HORÁK, M.

01.07.2003

Czech Technical University

Praha

80-86059-35-9

3rd International conference on Advanced Engineering Design AED 2003

F1.2

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