Publication detail

HSPICE Statistical Modeling

RECMAN, M.

Original Title

HSPICE Statistical Modeling

Type

conference paper

Language

English

Original Abstract

Since the active elements are fabricated during a common sequence of processing steps, the values of these elements are correlated. The active devices such as bipolar transistors must be completely statistically characterized to account for the model parameter interdependencies. The contribution aims to give the fundamental steps included in HSPICE active device statistical characterization. The modeling of correlations between the crucial bipolar transistor model parameters for forward active region is presented. The synthesis of correlated model including saturation current, forward beta and Early-effect parameter is described.

Keywords

circuit simulation, semiconductor device modeling, statistical model, transistor modeling

Authors

RECMAN, M.

RIV year

2003

Released

1. 1. 2003

Publisher

Novotný-Brno

Location

Brno

ISBN

80-214-2461-3

Book

Proceedings of the Socrates Workshop 2003

Pages from

136

Pages to

142

Pages count

7

BibTex

@inproceedings{BUT9405,
  author="Milan {Recman}",
  title="HSPICE Statistical Modeling",
  booktitle="Proceedings of the Socrates Workshop 2003",
  year="2003",
  pages="7",
  publisher="Novotný-Brno",
  address="Brno",
  isbn="80-214-2461-3"
}