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KUZDAS, J. VOREL, P.
Original Title
Parasitic Effects in Battery Charger Using New SiC Diodes
Type
conference paper
Language
English
Original Abstract
This article deals with a parasitic effects in highpower charger for electric vehicles. Because of the required minimum possible size and weight,while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. It was used semiconductors on based SiC and switching frequency 100kHz. Due to the high switching frequency it was necessary to eliminate some parasitic effects occurring. This converter was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.
Keywords
SiC diode, Cool-MOS transistor, high-power charger, switching frequency.
Authors
KUZDAS, J.; VOREL, P.
RIV year
2012
Released
15. 10. 2012
ISBN
978-80-214-4602-1
Book
XII. International Conference on Low Voltage Electrical Machines 2012
Edition
1
Edition number
Pages from
110
Pages to
112
Pages count
3
BibTex
@inproceedings{BUT95141, author="Jan {Kuzdas} and Pavel {Vorel}", title="Parasitic Effects in Battery Charger Using New SiC Diodes", booktitle="XII. International Conference on Low Voltage Electrical Machines 2012", year="2012", series="1", number="1", pages="110--112", isbn="978-80-214-4602-1" }