Přístupnostní navigace
E-application
Search Search Close
Publication detail
KHATEB, A., MUSIL, V.
Original Title
Floating gate MOSFET for low power applications
Type
conference paper
Language
English
Original Abstract
Circuits using floating-gate MOS transistors are well known from EPROMs, EEPROMs, and flash memories. Floating-gate circuits provide IC designers with a practical continuous-time capacitor-based technology, instead of the resistor-based technology used in discrete circuits. A floating gate occurs when we have no dc path to a fixed potential, precisely the effect traditionally avoided by many circuit designers and circuit simulators. The floating-gate voltage can modulate a channel between a source and drain and therefore can be used in computation. Capacitors coupling into this floating gate become effective gates of this transistor, where the gate strength depends upon the capacitor size. Floating-gate devices can become integral parts of continuous- time amplifiers and filters. In Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers and other applications.
Keywords
Microelectronics, floating-gate MOSFET, low power.
Authors
RIV year
2003
Released
22. 9. 2003
Publisher
Zd. Novotný
Location
Brno
ISBN
80-214-2461-3
Book
Proceedings of the Socrates Workshop. Short Contributions
Edition number
první
Pages from
76
Pages to
79
Pages count
4
BibTex
@inproceedings{BUT9583, author="Fabian {Khateb} and Vladislav {Musil}", title="Floating gate MOSFET for low power applications", booktitle="Proceedings of the Socrates Workshop. Short Contributions", year="2003", number="první", pages="4", publisher="Zd. Novotný", address="Brno", isbn="80-214-2461-3" }