Publication detail

Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma

DALLAEVA, D. ŠKARVADA, P. TOMÁNEK, P. SMITH, S. SAFARALIEV, G. BILALOV, B. GITIKCHIEV, M. KARDASHOVA, G.

Original Title

Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma

Type

journal article - other

Language

English

Original Abstract

A process for ion-plasmaformation of aluminumnitride (AlN) nanolayers on nitrided sapphire (Al2O3) substrates is presented. The method is based on the direct current magnetron sputtering of a high-purity aluminumtarget in the presence of an argon–nitrogen gas mix and high frequency-activated nitrogen plasma. The method, combined with ion etching, producedmatched layers by nitration of Al2O3 in the (0001) plane, and formation of high quality AlN epilayers on this surface was observed. The processing characteristics and morphology dependence on synthesis parameters were studied using atomic force microscopy.

Keywords

Wide-band-gap semiconductor, aluminum nitride, magnetron sputtering, morphology, composition, X-ray photoelectron spectrometry, atomic force microscopy

Authors

DALLAEVA, D.; ŠKARVADA, P.; TOMÁNEK, P.; SMITH, S.; SAFARALIEV, G.; BILALOV, B.; GITIKCHIEV, M.; KARDASHOVA, G.

RIV year

2013

Released

4. 1. 2013

Publisher

Elsevier

Location

North Holland

ISBN

0040-6090

Periodical

Thin Solid Films

Year of study

526

Number

526

State

Kingdom of the Netherlands

Pages from

92

Pages to

96

Pages count

5

BibTex

@article{BUT95892,
  author="Dinara {Sobola} and Pavel {Škarvada} and Pavel {Tománek} and Steve J. {Smith} and Gadjimet {Safaraliev} and Bilal {Bilalov} and Magomed {Gitikchiev} and Gulnara {Kardashova}",
  title="Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma",
  journal="Thin Solid Films",
  year="2013",
  volume="526",
  number="526",
  pages="92--96",
  issn="0040-6090"
}