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Publication detail
GRMELA, L. HRUŠKA, P.
Original Title
Simulation of quantum dot in electrostatic fields
Type
conference paper
Language
English
Original Abstract
Behavior of a nanostructure consisting of Si quantum dot (QD) embedded in SiO2 dielectric medium, which is under bias of varying electrostatic field is simulated. The paper presents the wave functions psi, probability functions psi.psi* and energies of quantum states of a QD. Abrupt displacement of the peak of psi.psi* at a certain field value is elucidated as electron emission. The field distribution and the characteristics of the nanostructure quantum states are simulated numerically with help of Comsol Multiphysics Poisson-Schrödinger 2D model, developed by the authors.
Keywords
quantum dot,field distribution,electrostatic field, wave functions
Authors
GRMELA, L.; HRUŠKA, P.
RIV year
2012
Released
10. 9. 2012
Location
Kharkiv, Ukraine
ISBN
978-1-4673-4479-1
Book
Mathematical Methods in Electromagnetic Theory
Pages from
193
Pages to
196
Pages count
4
BibTex
@inproceedings{BUT96009, author="Lubomír {Grmela} and Pavel {Hruška}", title="Simulation of quantum dot in electrostatic fields", booktitle="Mathematical Methods in Electromagnetic Theory", year="2012", pages="193--196", address="Kharkiv, Ukraine", isbn="978-1-4673-4479-1" }