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MOZALEV, A. SAKAIRI, M. TAKAHASHI, H. HABAZAKI, H. HUBALEK, J.
Original Title
Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors
Type
journal article - other
Language
English
Original Abstract
Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al-Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer). The films were examined by scanning and transmission electron microscopy and electrochemical impedance spectroscopy. Integral capacitors utilizing the anodic films as dielectrics combine the small-value capacitance (6.5 nF cm-2) with the excellent properties of high withstand field strength, low leakage current, and low loss tangent. The revealed dispersion of dielectric constant, and the presence of loss peaks on the temperature and frequency dependencies of losses denote the influence of ion-relaxation mechanism on dielectrics polarizability, with the characteristic times depending on the dielectric type. By selecting appropriate technological and electrolytic conditions, the functionality of the capacitors can be optimized to meet the needs of a specific range, from 1 kHz to about 300 MHz operating frequencies.
Keywords
porous alumina; tantalum oxide; nanostructure; dielectric properties; electric polarization; integral capacitors; high-frequency performance
Authors
MOZALEV, A.; SAKAIRI, M.; TAKAHASHI, H.; HABAZAKI, H.; HUBALEK, J.
RIV year
2012
Released
28. 2. 2012
Publisher
ELSEVIER SCIENCE SA
Location
PO BOX 564, 1001 LAUSANNE, SWITZERLAND
ISBN
0040-6090
Periodical
Thin Solid Films
Year of study
-
Number
State
Kingdom of the Netherlands
Pages from
1
Pages to
9
Pages count
URL
http://www.sciencedirect.com/science/article/pii/S0040609012002295#
BibTex
@article{BUT96730, author="Alexander {Mozalev} and Masatoshi {Sakairi} and Hideaki {Takahashi} and Hiroki {Habazaki} and Jaromír {Hubálek}", title="Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors", journal="Thin Solid Films", year="2012", volume="-", number="-", pages="1--9", issn="0040-6090", url="http://www.sciencedirect.com/science/article/pii/S0040609012002295#" }