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SOLOVEI, D. HUBALEK, J. MOZALEV, A.
Original Title
The growth and dielectric properties of porous-anodic-alumina-supported nanostructured Ta2O5/Ta films
Type
abstract
Language
English
Original Abstract
Amorphous tantalum pentoxide, grown on sintered tantalum powders or microstructured conducting substrates, has been of interest as a metal/oxide electrode with significantly increased overall surface area. Aiming at potential application to capacitors, we propose an advanced approach to fabricate Ta2O5/Ta films with highly porous nanostructured morphology and large surface-to-volume ratio via electrochemical anodizing of tantalum layers sputter-deposited over the nanoporous alumina substrates
Keywords
anodizing, capacitor, tantalum oxide, nanostructure
Authors
SOLOVEI, D.; HUBALEK, J.; MOZALEV, A.
Released
19. 8. 2012
Publisher
ISE
Location
Prague, Czech Republic
Pages from
1
Pages to
Pages count
BibTex
@misc{BUT96827, author="Dmitry {Solovei} and Jaromír {Hubálek} and Alexander {Mozalev}", title="The growth and dielectric properties of porous-anodic-alumina-supported nanostructured Ta2O5/Ta films", booktitle="63rd Annual Meeting of the International Society of Electrochemistry (ISE2012)", year="2012", pages="1--1", publisher="ISE", address="Prague, Czech Republic", note="abstract" }