Publication detail

Contacts charge transport and additional noise properties of semiconductor CdTe sensors

ŠIK, O. GRMELA, L. ŠIKULA, J.

Original Title

Contacts charge transport and additional noise properties of semiconductor CdTe sensors

English Title

Contacts charge transport and additional noise properties of semiconductor CdTe sensors

Type

conference paper

Language

Czech

Original Abstract

Contact quality analysis of Cadmium-Telluride detector has been conducted. IV characteristics at operating temperatures T = 305 K, 315 K, 325 K were measured. Results showed asymmetry of IV characteristics for negative and positive bias indicated by increased leakage current in case of negative biasing. Noise contributions of contacts were evaluated. Reverse biased contact in negative was found as dominant source of low frequency noise.

English abstract

Contact quality analysis of Cadmium-Telluride detector has been conducted. IV characteristics at operating temperatures T = 305 K, 315 K, 325 K were measured. Results showed asymmetry of IV characteristics for negative and positive bias indicated by increased leakage current in case of negative biasing. Noise contributions of contacts were evaluated. Reverse biased contact in negative was found as dominant source of low frequency noise.

Keywords

CdTe , noise , quality analysis , spectrometer

Key words in English

CdTe , noise , quality analysis , spectrometer

Authors

ŠIK, O.; GRMELA, L.; ŠIKULA, J.

RIV year

2013

Released

3. 4. 2013

Publisher

IEEE Thailand Section

Location

Bangkok, Thailand

ISBN

978-1-4673-5694-7

Book

Proceedings of the 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC),

Pages from

1

Pages to

4

Pages count

4

URL

http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6482863

BibTex

@inproceedings{BUT98887,
  author="Ondřej {Šik} and Lubomír {Grmela} and Josef {Šikula}",
  title="Contacts charge transport and additional noise properties of semiconductor CdTe sensors",
  booktitle="Proceedings of the 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC),",
  year="2013",
  pages="1--4",
  publisher="IEEE Thailand Section",
  address="Bangkok, Thailand",
  doi="10.1109/EDSSC.2012.6482863",
  isbn="978-1-4673-5694-7",
  url="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6482863"
}