Publication detail

Surface phonon scattering in epitaxial graphene on 6H-SiC

GIESBERS, A. PROCHÁZKA, P. FLIPSE, C.

Original Title

Surface phonon scattering in epitaxial graphene on 6H-SiC

Type

journal article - other

Language

English

Original Abstract

We show the growth of high-quality epitaxial graphene on 6H-SiC with Raman signatures comparable to exfoliated flakes. We ascribe the remaining low-quality transport properties to the strong electron-phonon coupling to two low-energy phonon modes at 70 and 16 meV. The coupling of these modes is enhanced by the defects present in the SiC substrate and buffer layer. Measurements of the mobility versus carrier concentration show a square-root dependence, corroborating the importance of surface phonon scattering in the limited mobility of graphene on SiC.

Keywords

Graphene, SiC, Phonon scattring

Authors

GIESBERS, A.; PROCHÁZKA, P.; FLIPSE, C.

RIV year

2013

Released

6. 5. 2013

ISBN

1098-0121

Periodical

PHYSICAL REVIEW B

Year of study

87

Number

19

State

United States of America

Pages from

195405-1

Pages to

195405-5

Pages count

5