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GIESBERS, A. PROCHÁZKA, P. FLIPSE, C.
Original Title
Surface phonon scattering in epitaxial graphene on 6H-SiC
Type
journal article - other
Language
English
Original Abstract
We show the growth of high-quality epitaxial graphene on 6H-SiC with Raman signatures comparable to exfoliated flakes. We ascribe the remaining low-quality transport properties to the strong electron-phonon coupling to two low-energy phonon modes at 70 and 16 meV. The coupling of these modes is enhanced by the defects present in the SiC substrate and buffer layer. Measurements of the mobility versus carrier concentration show a square-root dependence, corroborating the importance of surface phonon scattering in the limited mobility of graphene on SiC.
Keywords
Graphene, SiC, Phonon scattring
Authors
GIESBERS, A.; PROCHÁZKA, P.; FLIPSE, C.
RIV year
2013
Released
6. 5. 2013
ISBN
1098-0121
Periodical
PHYSICAL REVIEW B
Year of study
87
Number
19
State
United States of America
Pages from
195405-1
Pages to
195405-5
Pages count
5