Publication detail

Study of Dry Etching Process for Substrates Preparation

DALLAEVA, D. RAMAZANOV, S. KLAMPÁR, M. TOMÁNEK, P.

Original Title

Study of Dry Etching Process for Substrates Preparation

Type

conference paper

Language

English

Original Abstract

This study describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching. Processed substrates was studied by interferometry to define the etch depth and by atomic force microscopy to study the morphology and statistical analysis of surface roughness before and after etching. This allowed determining the optimal conditions of the process.

Keywords

physical etching, substrate, silicon carbide, sapphire

Authors

DALLAEVA, D.; RAMAZANOV, S.; KLAMPÁR, M.; TOMÁNEK, P.

RIV year

2013

Released

11. 9. 2013

Publisher

Brno University of Technology

Location

Brno

ISBN

978-80-214-4759-2

Book

International Interdisciplinary PhD Workshop 2013

Pages from

60

Pages to

64

Pages count

4

BibTex

@inproceedings{BUT102101,
  author="Dinara {Sobola} and Shihgasan {Ramazanov} and Marián {Klampár} and Pavel {Tománek}",
  title="Study of Dry Etching Process for Substrates Preparation",
  booktitle="International Interdisciplinary PhD Workshop 2013",
  year="2013",
  pages="60--64",
  publisher="Brno University of Technology",
  address="Brno",
  isbn="978-80-214-4759-2"
}