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DALLAEVA, D. RAMAZANOV, S. KLAMPÁR, M. TOMÁNEK, P.
Original Title
Study of Dry Etching Process for Substrates Preparation
Type
conference paper
Language
English
Original Abstract
This study describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching. Processed substrates was studied by interferometry to define the etch depth and by atomic force microscopy to study the morphology and statistical analysis of surface roughness before and after etching. This allowed determining the optimal conditions of the process.
Keywords
physical etching, substrate, silicon carbide, sapphire
Authors
DALLAEVA, D.; RAMAZANOV, S.; KLAMPÁR, M.; TOMÁNEK, P.
RIV year
2013
Released
11. 9. 2013
Publisher
Brno University of Technology
Location
Brno
ISBN
978-80-214-4759-2
Book
International Interdisciplinary PhD Workshop 2013
Pages from
60
Pages to
64
Pages count
4
BibTex
@inproceedings{BUT102101, author="Dinara {Sobola} and Shihgasan {Ramazanov} and Marián {Klampár} and Pavel {Tománek}", title="Study of Dry Etching Process for Substrates Preparation", booktitle="International Interdisciplinary PhD Workshop 2013", year="2013", pages="60--64", publisher="Brno University of Technology", address="Brno", isbn="978-80-214-4759-2" }