Publication detail

Activation energy of traps in GaN HFETs

PAVELKA, J. ŠIKULA, J. TACANO, M. TANUMA, N.

Original Title

Activation energy of traps in GaN HFETs

Type

conference paper

Language

English

Original Abstract

Low frequency noise characteristics of GaN/AlGaN HFET structures were measured in wide temperature range and activation energy of traps were determined by several methods.

Keywords

trap, GaN, HFET, activation energy, RTS noise

Authors

PAVELKA, J.; ŠIKULA, J.; TACANO, M.; TANUMA, N.

RIV year

2013

Released

24. 6. 2013

Publisher

IEEE

Location

Montpellier

ISBN

978-1-4799-0668-0

Book

Proceedings of 22nd International Conference on Noise and Fluctuations ICNF 2013, IEEE Catalog Number: CFP1392N-POD

Pages from

114

Pages to

117

Pages count

4

BibTex

@inproceedings{BUT104102,
  author="Jan {Pavelka} and Josef {Šikula} and Munecazu {Tacano} and Nobuhisa {Tanuma}",
  title="Activation energy of traps in GaN HFETs",
  booktitle="Proceedings of 22nd International Conference on Noise and Fluctuations ICNF 2013, IEEE Catalog Number: CFP1392N-POD",
  year="2013",
  pages="114--117",
  publisher="IEEE",
  address="Montpellier",
  isbn="978-1-4799-0668-0"
}