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DALLAEVA, D. RAMAZANOV, S. RAMAZANOV, G. AKHMEDOV, R. TOMÁNEK, P.
Original Title
Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps
Type
journal article in Web of Science
Language
English
Original Abstract
The objective of the study is dependence of optical properties of solid solution of silicon carbide and aluminum nitride on structure. Even small differences in composition provide manipulation of band gap features in wide range. Data for this paper were collected by X-ray diffraction and by study of photoluminescence and absorption spectra. Evolution of optical properties as a result of composition changing was studied. X-ray study proves the presence of (SiC)1-x(AlN)x solid solution. Investigation of absorption spectra shows that optical band gap of the sample with composition of (SiC)0,88(AlN)0,12 is 3.1 eV and 4.24 eV for (SiC)0,36(AlN)0,64 solid solution. Photoluminescence demonstrates strongly dependence of spectrum on x concentration. The results are in mutual agrement and correspond to the therory. These data allows optimization of optical properties for certain optoelectronic application by control of the (SiC)1-x(AlN)x composition
Keywords
x-ray diffraction, composition, photoluminescence, absorption coefficient, optical band gap, electron transition
Authors
DALLAEVA, D.; RAMAZANOV, S.; RAMAZANOV, G.; AKHMEDOV, R.; TOMÁNEK, P.
RIV year
2015
Released
6. 1. 2015
Publisher
SPIE
Location
Bellingham, USA
ISBN
0277-786X
Periodical
Proceedings of SPIE
Year of study
9450
Number
State
United States of America
Pages from
94501R-1
Pages to
94501R-6
Pages count
6