Publication detail

Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

DALLAEVA, D. RAMAZANOV, S. RAMAZANOV, G. AKHMEDOV, R. TOMÁNEK, P.

Original Title

Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

Type

journal article in Web of Science

Language

English

Original Abstract

The objective of the study is dependence of optical properties of solid solution of silicon carbide and aluminum nitride on structure. Even small differences in composition provide manipulation of band gap features in wide range. Data for this paper were collected by X-ray diffraction and by study of photoluminescence and absorption spectra. Evolution of optical properties as a result of composition changing was studied. X-ray study proves the presence of (SiC)1-x(AlN)x solid solution. Investigation of absorption spectra shows that optical band gap of the sample with composition of (SiC)0,88(AlN)0,12 is 3.1 eV and 4.24 eV for (SiC)0,36(AlN)0,64 solid solution. Photoluminescence demonstrates strongly dependence of spectrum on x concentration. The results are in mutual agrement and correspond to the therory. These data allows optimization of optical properties for certain optoelectronic application by control of the (SiC)1-x(AlN)x composition

Keywords

x-ray diffraction, composition, photoluminescence, absorption coefficient, optical band gap, electron transition

Authors

DALLAEVA, D.; RAMAZANOV, S.; RAMAZANOV, G.; AKHMEDOV, R.; TOMÁNEK, P.

RIV year

2015

Released

6. 1. 2015

Publisher

SPIE

Location

Bellingham, USA

ISBN

0277-786X

Periodical

Proceedings of SPIE

Year of study

9450

Number

9450

State

United States of America

Pages from

94501R-1

Pages to

94501R-6

Pages count

6