Publication detail

Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy

CHOBOLA, Z. LUŇÁK, M. VANĚK, J. HULICIUS, E. KUSÁK, I.

Original Title

Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy

Type

journal article in Web of Science

Language

English

Original Abstract

The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE. Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE technology.

Keywords

molecular beam epitaxy; excess noise; lasers diodes

Authors

CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.; KUSÁK, I.

RIV year

2015

Released

1. 8. 2015

Publisher

Faculty of Electrical Engineering and Information Technology of the Slovak University of Technology

Location

Bratislava

ISBN

1335-3632

Periodical

Journal of Electrical Engineering

Year of study

66

Number

4

State

Slovak Republic

Pages from

226

Pages to

230

Pages count

5

URL

https://content.sciendo.com/view/journals/jee/66/4/article-p226.xml

Full text in the Digital Library

http://hdl.handle.net/11012/84115

BibTex

@article{BUT117577,
  author="Zdeněk {Chobola} and Miroslav {Luňák} and Jiří {Vaněk} and Eduard {Hulicius} and Ivo {Kusák}",
  title="Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy",
  journal="Journal of Electrical Engineering
",
  year="2015",
  volume="66",
  number="4",
  pages="226--230",
  doi="10.2478/jee-2015-0036",
  issn="1335-3632",
  url="https://content.sciendo.com/view/journals/jee/66/4/article-p226.xml"
}