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ŠKVARENINA, Ľ. MACKŮ, R.
Original Title
Application of electrical measurements to investigation of solar cell microstructure defects
Type
journal article in Scopus
Language
English
Original Abstract
The research is aimed to the investigation of the microstructure defects in the silicon and the thin-film CIGS solar cells. These defects have their origin mainly in the technological process of a production but they can be caused by an accidental mechanical stress during a normal operation, too. That leads to a formation of the micro-cracks and the fractures, which have a significant effect on a device efficiency and reliability. The reverse-bias conditions are usually used for the defects characterization purposes. The mechanical induced defects increase a reverse current which leads to a strong overheating in the local breakdowns and the surroundings areas, thus for the defects localization purposes an infrared imaging and an electroluminescence method is used. Beyond these commonly used methods the results from the electrical current noise fluctuations observed in a frequency domain are presented in this work. The noise fluctuations measurement is a reliable indicator of a device quality and allow us to qualify the device damage extent. Using combination of these methods it is possible to localize the particular defects, assess the degree of a damage and classify the elimination process of the particular defects.
Keywords
Solar Cell, Local Defects, Fractures, Electroluminescence, Noise
Authors
ŠKVARENINA, Ľ.; MACKŮ, R.
Released
2. 1. 2017
Publisher
Trans Tech Publications
Location
Switzerland
ISBN
1662-9779
Periodical
Solid State Phenomena
Year of study
258
Number
8
State
Swiss Confederation
Pages from
473
Pages to
476
Pages count
672
URL
http://www.scientific.net/SSP.258.473
BibTex
@article{BUT130347, author="Ľubomír {Škvarenina} and Robert {Macků}", title="Application of electrical measurements to investigation of solar cell microstructure defects", journal="Solid State Phenomena", year="2017", volume="258", number="8", pages="473--476", doi="10.4028/www.scientific.net/SSP.258.473", issn="1662-9779", url="http://www.scientific.net/SSP.258.473" }