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HOFMAN, J. HÁZE, J. SHARP, R.
Original Title
TID in-situ measurement of temperature coefficient of various commercial voltage references
Type
conference paper
Language
English
Original Abstract
this work presents results of a total ionising dose experiment, during which commercial voltage references were irradiated and measured under different bias conditions using an in-situ technique. The automated test system allowed the output voltage of the voltage references to be measured at various temperatures during irradiation to 100 krad(Si) and the subsequent 7 day period of annealing.The experimental results obtained allow improved insight into total ionising dose induced degradation of data acquisition systems for space applications. The results show that the temperature coefficient of selected commercial voltage references significantly changes (increases) with TID. Therefore these devices can be used for data acquisition systems only on board LEO missions like CubeSats, which are typically exposed to a limited radiation dose.
Keywords
voltage reference, bandgap, buried Zener diode, data acquisition, A/D converter, TID test, in-situ, temperature coefficient, automated test equipment, test methods
Authors
HOFMAN, J.; HÁZE, J.; SHARP, R.
Released
4. 10. 2017
Publisher
IEEE
ISBN
9781509002337
Book
Radecs 2017 proceedings
Pages from
459
Pages to
462
Pages count
4
URL
https://ieeexplore.ieee.org/document/8093206
BibTex
@inproceedings{BUT140351, author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp}", title="TID in-situ measurement of temperature coefficient of various commercial voltage references", booktitle="Radecs 2017 proceedings", year="2017", pages="459--462", publisher="IEEE", doi="10.1109/RADECS.2017.8696249", isbn="9781509002337", url="https://ieeexplore.ieee.org/document/8093206" }