Publication detail

0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier

KUMNGERN, M. TORTEANCHAI, U. KHATEB, F.

Original Title

0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier

Type

conference paper

Language

English

Original Abstract

This paper describes a new low-voltage low-power transconductance amplifier for low-voltage low-power signal processing applications. The proposed circuit uses bulk-driven quasi-floating gate technique to offer a 0.5 V operating power supply and high operating frequency. The performances of the proposed circuit can be conformed using PSPICE simulations. The simulation result shows that the proposed circuit provides 16.7 uW power consumption and 10 MHz open loop gain. The proposed circuit has been used to realize Tow-Thomas biquad.

Keywords

Amplifier; bulk-driven MOS; quasi-floating gate; low-voltage low-power circuit

Authors

KUMNGERN, M.; TORTEANCHAI, U.; KHATEB, F.

Released

6. 1. 2018

Publisher

IEEE

Location

Batumi, Georgia

ISBN

978-9972-1-2874-5

Book

Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).

Pages from

152

Pages to

155

Pages count

4

URL

http://ieeexplore.ieee.org/document/8292043/

BibTex

@inproceedings{BUT141736,
  author="Montree {Kumngern} and Usa {Torteanchai} and Fabian {Khateb}",
  title="0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier",
  booktitle="Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).",
  year="2018",
  pages="152--155",
  publisher="IEEE",
  address="Batumi, Georgia",
  doi="10.1109/ICECS.2017.8292043",
  isbn="978-9972-1-2874-5",
  url="http://ieeexplore.ieee.org/document/8292043/"
}