Publication detail

Strange attractors generated by multiple-valued static memory cell with polynomial approximation of resonant tunneling diodes

PETRŽELA, J.

Original Title

Strange attractors generated by multiple-valued static memory cell with polynomial approximation of resonant tunneling diodes

Type

journal article in Web of Science

Language

English

Original Abstract

This paper brings analysis of the multiple-valued memory system (MVMS) composed by a pair of the resonant tunneling diodes (RTD). Ampere-voltage characteristic (AVC) of both diodes is approximated in operational voltage range as common in practice: by polynomial scalar function. Mathematical model of MVMS represents autonomous deterministic dynamical system with three degrees of freedom and smooth vector field. Based on the very recent results achieved for piecewise-linear MVMS numerical values of the parameters are calculated such that funnel and double spiral chaotic attractor is observed. Existence of such types of strange attractors is proved both numerically by using concept of the largest Lyapunov exponents (LLE) and experimentally by computer-aided simulation of designed lumped circuit using only commercially available active elements.

Keywords

chaos; Lyapunov exponents; multiple-valued; static memory; strange attractors

Authors

PETRŽELA, J.

Released

12. 9. 2018

Publisher

MDPI

Location

Basel, Switzerland

ISBN

1099-4300

Periodical

ENTROPY

Year of study

20

Number

9

State

Swiss Confederation

Pages from

1

Pages to

23

Pages count

23

URL

http://www.mdpi.com/1099-4300/20/9/697

Full text in the Digital Library

http://hdl.handle.net/11012/85298

BibTex

@article{BUT149821,
  author="Jiří {Petržela}",
  title="Strange attractors generated by multiple-valued static memory cell with polynomial approximation of
resonant tunneling diodes",
  journal="ENTROPY",
  year="2018",
  volume="20",
  number="9",
  pages="1--23",
  doi="10.3390/e20090697",
  issn="1099-4300",
  url="http://www.mdpi.com/1099-4300/20/9/697"
}