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FILLNER, P. HRDÝ, R. PRÁŠEK, J. NEŠPOR, D. HUBÁLEK, J.
Original Title
ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization
Type
conference paper
Language
English
Original Abstract
Atomic layer deposition (ALD) is a strong method of fabrication of high-k dielectrics with excellent properties. We present the ALD grown high-k CMOS compatible dielectrics used for capacitors on a chip application. Several dielectric films based on Al2O3 and HfO2 were grown on high-conductive silicon wafers and used as on-chip circular capacitors with diameter from 100 to 1500 μm. The effect of the interface between dielectric layers was examined in oxide stuck-based films deposited by plasma-enhanced atomic layer deposition. Performed material, structural and electrical analyses of deposited dielectrics confirmed their highly promising properties for application in new generation of 3D capacitors, semiconductor devices and energy storage element.
Keywords
ALD; high-k dielectric; hafnium; aluminum; capcacitor
Authors
FILLNER, P.; HRDÝ, R.; PRÁŠEK, J.; NEŠPOR, D.; HUBÁLEK, J.
Released
21. 8. 2018
Publisher
IEEE Computer Society
Location
Serbia
ISBN
9781538657317
Book
41st International Spring Seminar on Electronics Technology ISSE2018
2161-2528
Periodical
Electronics Technology (ISSE)
Year of study
2018
State
United States of America
Pages from
1
Pages to
5
Pages count
BibTex
@inproceedings{BUT150785, author="Patrik {Fillner} and Radim {Hrdý} and Jan {Prášek} and Dušan {Nešpor} and Jaromír {Hubálek}", title="ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization", booktitle="41st International Spring Seminar on Electronics Technology ISSE2018", year="2018", journal="Electronics Technology (ISSE)", volume="2018", pages="1--5", publisher="IEEE Computer Society", address="Serbia", doi="10.1109/ISSE.2018.8443766", isbn="9781538657317", issn="2161-2528" }