Publication detail

Functional nano-structuring of thin silicon nitride membranes

MATĚJKA, M. KRÁTKÝ, S. ŘÍHÁČEK, T. KNÁPEK, A. KOLAŘÍK, V.

Original Title

Functional nano-structuring of thin silicon nitride membranes

Type

journal article in Web of Science

Language

English

Original Abstract

The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.

Keywords

membrane, nano optical device, electron optics, electron beam lithography, silicon nitride, reactive ion etching, silicon etching, microfabrication

Authors

MATĚJKA, M.; KRÁTKÝ, S.; ŘÍHÁČEK, T.; KNÁPEK, A.; KOLAŘÍK, V.

Released

13. 5. 2020

Publisher

Sciendo

ISBN

1335-3632

Periodical

Journal of Electrical Engineering

Year of study

71

Number

2

State

Slovak Republic

Pages from

127

Pages to

130

Pages count

4

URL

https://www.sciendo.com/article/10.2478/jee-2020-0019

Full text in the Digital Library

http://hdl.handle.net/11012/196581

BibTex

@article{BUT165291,
  author="Milan {Matějka} and Stanislav {Krátký} and Tomáš {Říháček} and Alexandr {Knápek} and Vladimír {Kolařík}",
  title="Functional nano-structuring of thin silicon nitride membranes",
  journal="Journal of Electrical Engineering
",
  year="2020",
  volume="71",
  number="2",
  pages="127--130",
  doi="10.2478/jee-2020-0019",
  issn="1335-3632",
  url="https://www.sciendo.com/article/10.2478/jee-2020-0019"
}