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CHARVOT, J. ZAZPE MENDIOROZ, R. MACÁK, J. BUREŠ, F.
Original Title
Organoselenium Precursors for Atomic Layer Deposition
Type
journal article in Web of Science
Language
English
Original Abstract
Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as H2Se and diethyl(di)selenide has recently been extended by bis trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(N,N-dimethyldithiocarbamate)-selenium. Their structural aspects, property tuning, fundamental properties, and preparations are discussed. It turned out that symmetric four- and six-membered cyclic silyl selenides possess well-balanced reactivity/stability, facile and cost-effective synthesis starting from inexpensive and readily available chlorosilanes, improved resistance toward air and moisture, easy handling, sufficient volatility, thermal resistance, and complete gas-to-solid phase exchange reaction with MoCl5, affording MoSe2 nanostructures. These properties make them the most promising Se precursor developed for atomic layer deposition so far.
Keywords
Organoselenium compounds
Authors
CHARVOT, J.; ZAZPE MENDIOROZ, R.; MACÁK, J.; BUREŠ, F.
Released
16. 3. 2021
Publisher
American Chemical Society
Location
WASHINGTON
ISBN
2470-1343
Periodical
ACS OMEGA
Year of study
6
Number
10
State
United States of America
Pages from
6554
Pages to
6558
Pages count
5
URL
https://pubs.acs.org/doi/10.1021/acsomega.1c00223
Full text in the Digital Library
http://hdl.handle.net/11012/202274
BibTex
@article{BUT173123, author="Jaroslav {Charvot} and Raúl {Zazpe Mendioroz} and Jan {Macák} and Filip {Bureš}", title="Organoselenium Precursors for Atomic Layer Deposition", journal="ACS OMEGA", year="2021", volume="6", number="10", pages="6554--6558", doi="10.1021/acsomega.1c00223", issn="2470-1343", url="https://pubs.acs.org/doi/10.1021/acsomega.1c00223" }