Publication detail

Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy

KUNC, J. REJHON, M. DĚDIČ, V. BÁBOR, P.

Original Title

Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy

Type

journal article in Web of Science

Language

English

Original Abstract

We have grown homoepitaxial high resistivity SiC layers on conducting SiC substrates. We develop a method to determine the thickness of grown layers by scanning confocal Raman spectroscopy (SCRS). We also grow epitaxial graphene on SiC layers to label the top sample surface, and, we correlate the top surface position with Rayleigh scattering (RS). The interface between the high resistivity SiC layer and conductive SiC substrate is probed by the transition from LO phonon to the coupled LO phonon-plasmon Raman mode. The layer thickness measurements are verified by ellipsometry and Secondary Ion Mass Spectroscopy (SIMS). We show that the SCRS method provides superior lateral and vertical resolution, it is robust against errorneous conclusions based on ad-hoc models, and it is easy to implement. (C) 2019 Elsevier B.V. All rights reserved.

Keywords

SiC layer thickness; Graphene; Raman spectroscopy

Authors

KUNC, J.; REJHON, M.; DĚDIČ, V.; BÁBOR, P.

Released

15. 6. 2019

Publisher

ELSEVIER SCIENCE SA

Location

LAUSANNE

ISBN

0925-8388

Periodical

Journal of Alloys and Compounds

Year of study

789

Number

1

State

Swiss Confederation

Pages from

607

Pages to

612

Pages count

6

URL

https://www.sciencedirect.com/science/article/pii/S0925838819307716

BibTex

@article{BUT177520,
  author="Jan {Kunc} and Martin {Rejhon} and Václav {Dědič} and Petr {Bábor}",
  title="Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy",
  journal="Journal of Alloys and Compounds",
  year="2019",
  volume="789",
  number="1",
  pages="607--612",
  doi="10.1016/j.jallcom.2019.02.305",
  issn="0925-8388",
  url="https://www.sciencedirect.com/science/article/pii/S0925838819307716"
}