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JURÍK, P. GALAJDA, P. SOKOL, M. URBANEC, T.
Original Title
Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology
Type
conference paper
Language
English
Original Abstract
The paper describes a design and simulation of the differential driver for a dielectric resonator as an Application Specific Integrated Circuit for Ultra-Wideband (UWB) sensor systems. The driver was implemented in 130 nm SiGe BiCMOS technology from IHP Microelectronics. The circuit was designed for the parallel configuration of microstrip lines, with coupled cylindrical dielectric resonator between them. In the simulations, the circuit oscillated around required 21.75 GHz frequency with an equivalent dielectric resonator circuit. The wire-bond inductance influence on driver frequency and matching are simulated and explained. The power consumption of the oscillator is 25 mA at 2.5 V power supply. The maximum simulated single-ended output amplitude achieves 660 mVpp.
Keywords
DRO; oscillator; UWB; ASIC
Authors
JURÍK, P.; GALAJDA, P.; SOKOL, M.; URBANEC, T.
Released
27. 4. 2023
Publisher
IEEE
Location
NEW YORK
ISBN
979-8-3503-9834-2
Book
RADIOELEKTRONIKA 2023: 2023 33rd International Conference Radioelektronika
Pages from
1
Pages to
5
Pages count
URL
https://ieeexplore.ieee.org/abstract/document/10109083
BibTex
@inproceedings{BUT183813, author="Patrik {Jurík} and Pavol {Galajda} and Miroslav {Sokol} and Tomáš {Urbanec}", title="Design of Differential Oscillator with Dielectric Resonator in a 130 nm SiGe BiCMOS Technology", booktitle="RADIOELEKTRONIKA 2023: 2023 33rd International Conference Radioelektronika", year="2023", pages="5", publisher="IEEE", address="NEW YORK", doi="10.1109/RADIOELEKTRONIKA57919.2023.10109083", isbn="979-8-3503-9834-2", url="https://ieeexplore.ieee.org/abstract/document/10109083" }