Publication detail

Serial Resistance Effect on Organic Electrochemical Transistors Transconductance

MARKOVÁ, A. STŘÍTESKÝ, S. WEITER, M. VALA, M.

Original Title

Serial Resistance Effect on Organic Electrochemical Transistors Transconductance

Type

journal article in Web of Science

Language

English

Original Abstract

Organic electrochemical transistors (OECTs) with variable electrode resistance and channel conductivity were studied. The effect of parasitic serial resistance on OECT function, especially transconductance, was evaluated. It was shown that due to the nonoptimized serial resistance, the transistors can have a transconductance lower by tens of percentage compared to the theoretical intrinsic transconductance. We show here that by simply reducing the contacts' resistance, it is possible to prepare a planar OECT with a high transconductance of 108 mS, which is close to the intrinsic transconductance of 121 mS. These values represent some of the highest ones reported so far, despite the fact that the poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) used here has a lower conductivity.

Keywords

Bioelectronics; organic electrochemical transistor (OECT); poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS); serial resistance; transconductance

Authors

MARKOVÁ, A.; STŘÍTESKÝ, S.; WEITER, M.; VALA, M.

Released

24. 7. 2023

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Location

PISCATAWAY

ISBN

1530-437X

Periodical

IEEE SENSORS JOURNAL

Year of study

23

Number

17

State

United States of America

Pages from

19417

Pages to

19423

Pages count

7

URL

BibTex

@article{BUT184414,
  author="Aneta {Marková} and Stanislav {Stříteský} and Martin {Weiter} and Martin {Vala}",
  title="Serial Resistance Effect on Organic Electrochemical Transistors Transconductance",
  journal="IEEE SENSORS JOURNAL",
  year="2023",
  volume="23",
  number="17",
  pages="7",
  doi="10.1109/JSEN.2023.3296939",
  issn="1530-437X",
  url="https://ieeexplore.ieee.org/document/10192544"
}