Publication detail

FET Gate Driver Utilising Transient Gate Overvoltage

TOMÍČEK, P. BOUŠEK, J.

Original Title

FET Gate Driver Utilising Transient Gate Overvoltage

Type

conference paper

Language

English

Original Abstract

In this paper a method for driving field effect transistors is described. This method uses a short high-voltage pulse on the gate to mitigate the effects of parasitic gate inductance and resistance. The proposed driver was able to reduce the fall time of drain voltage from 12 ns to 4 ns compared to conventional driving.

Keywords

gate driver, FET, gate overvoltage, switching speed

Authors

TOMÍČEK, P.; BOUŠEK, J.

Released

6. 7. 2023

Publisher

IEEE

ISBN

979-8-3503-3484-5

Book

2023 46th International Spring Seminar on Electronics Technology (ISSE)

ISBN

2161-2536

Periodical

International Spring Seminar on Electronics Technology ISSE

Year of study

46

Number

1

State

United States of America

Pages from

1

Pages to

5

Pages count

5

URL

https://ieeexplore.ieee.org/document/10168351

BibTex

@inproceedings{BUT184434,
  author="Pavel {Tomíček} and Jaroslav {Boušek}",
  title="FET Gate Driver Utilising Transient Gate Overvoltage",
  booktitle="2023 46th International Spring Seminar on Electronics Technology (ISSE)",
  year="2023",
  journal="International Spring Seminar on Electronics Technology ISSE",
  volume="46",
  number="1",
  pages="1--5",
  publisher="IEEE",
  doi="10.1109/ISSE57496.2023.10168351",
  isbn="979-8-3503-3484-5",
  issn="2161-2536",
  url="https://ieeexplore.ieee.org/document/10168351"
}