Publication detail

Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

PONGRÁCZ, J. VACEK, P. GRÖGER, R.

Original Title

Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

Type

journal article in Web of Science

Language

English

Original Abstract

Epitaxial growth of wurtzite AlN films on Si {111} results in 19% lattice misfit, which gives rise to a large density of threading dislocations with different recombination rates of electron-hole pairs. Here, we investigate types and distributions of threading dislocations of the MOVPE-grown 200 nm AlN/Si {111} film, whereby the dislocations are visualized using the technique of wet chemical etching. Atomic force microscopy suggests the existence of four different types of etch pits without any topological differences. Cross-sectional transmission electron microscope studies on etched samples are employed to associate the types of dislocations with the shapes of their etch pits. The recombination activity of individual dislocations was quantified by measuring the electron beam induced current and by correlative measurement of topography, secondary electron imaging, and the electron beam absorbed current. The strongest recombination activity was obtained for the m + c-type (mixed), c-type (screw), and a + c-type (mixed) threading dislocations, whereas the a-type (edge) threading dislocations were nearly recombination-inactive.

Keywords

Epitaxial-Growth; AIN; Threading Dislocations; Electron Microscopy

Authors

PONGRÁCZ, J.; VACEK, P.; GRÖGER, R.

Released

21. 11. 2023

Publisher

AIP Publishing

Location

MELVILLE

ISBN

1089-7550

Periodical

Journal of Applied Physics

Year of study

134

Number

19

State

United States of America

Pages count

11

URL

https://pubs.aip.org/aip/jap/article/134/19/195704/2921456/Recombination-activity-of-threading-dislocations

BibTex

@article{BUT187795,
  author="Jakub {Pongrácz} and Petr {Vacek} and Roman {Gröger}",
  title="Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid",
  journal="Journal of Applied Physics",
  year="2023",
  volume="134",
  number="19",
  pages="11",
  doi="10.1063/5.0171937",
  issn="1089-7550",
  url="https://pubs.aip.org/aip/jap/article/134/19/195704/2921456/Recombination-activity-of-threading-dislocations"
}