Publication detail
Preparation of GaN Nanocrystals with Single Ag Cores
ČALKOVSKÝ, V. MACH, J. BARTOŠÍK, M. PIASTEK, J. KOSTKA, M. MIKERÁSEK, V. SUPALOVÁ, L. KONEČNÝ, M. KVAPIL, M. HORÁK, M. ŠIKOLA, T.
Original Title
Preparation of GaN Nanocrystals with Single Ag Cores
Type
journal article in Web of Science
Language
English
Original Abstract
We report on a low-temperature hybrid method for the preparation of GaN nanocrystals (NCs) with embedded single Ag cores. GaN growth is realized by a physical vapor deposition of Ga atoms on a SiO2 substrate with colloidal Ag nanoparticles on its surface, assisted with an ultralow energy (50 eV) nitrogen-ion-beam bombardment at temperatures being significantly lower (T < 350 degrees C) than in conventional GaN deposition techniques (e.g., MOCVD, 1000 degrees C). We call this method Low Temperature Droplet Epitaxy (LTDE). The low deposition temperature allows GaN nanocrystals to be prepared with embedded metal-aluminum colloidal nanoparticles as their cores. A combination of STEM, SEM, scanning Auger microscopy, XPS, and AFM was applied to characterize semiconductor and metal nanoparticles. By their implementation, we optimized morphology, structure, and chemical composition of these nanocrystals and, consequently, demonstrated their enhanced photoluminescent properties.
Keywords
LIGHT-EMITTING-DIODES; SPECTROSCOPY; SILVER; ENHANCEMENT; AU
Authors
ČALKOVSKÝ, V.; MACH, J.; BARTOŠÍK, M.; PIASTEK, J.; KOSTKA, M.; MIKERÁSEK, V.; SUPALOVÁ, L.; KONEČNÝ, M.; KVAPIL, M.; HORÁK, M.; ŠIKOLA, T.
Released
12. 9. 2024
Publisher
AMER CHEMICAL SOC
Location
WASHINGTON
ISBN
1528-7505
Periodical
Crystal Growth and Design
Year of study
24
Number
19
State
United States of America
Pages from
7904
Pages to
7909
Pages count
6
URL
BibTex
@article{BUT196734,
author="Vojtěch {Čalkovský} and Jindřich {Mach} and Miroslav {Bartošík} and Jakub {Piastek} and Marek {Kostka} and Vojtěch {Mikerásek} and Linda {Supalová} and Martin {Konečný} and Michal {Kvapil} and Michal {Horák} and Tomáš {Šikola}",
title="Preparation of GaN Nanocrystals with Single Ag Cores",
journal="Crystal Growth and Design",
year="2024",
volume="24",
number="19",
pages="7904--7909",
doi="10.1021/acs.cgd.4c00776",
issn="1528-7505",
url="https://pubs.acs.org/doi/10.1021/acs.cgd.4c00776"
}