Publication detail

Non-Poisson Process in RTS-like noise

PAVELKA, J. ŠIKULA, J. TACANO, M.

Original Title

Non-Poisson Process in RTS-like noise

Type

conference paper

Language

English

Original Abstract

RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. Statistical analysis of RTS noise in InGaAs sample revealed considerable correlation of subsequent pulse duration.

Keywords

RTS noise, 1/f noise, MOSFET, HFET, InGaAs, GaN

Authors

PAVELKA, J.; ŠIKULA, J.; TACANO, M.

RIV year

2007

Released

10. 9. 2007

Publisher

AIP

Location

Tokio

ISBN

978-0-7354-0432-8

Book

Proc. ICNF 2007 AIP Conf. Proc. Vol. 922

Pages from

111

Pages to

114

Pages count

4

BibTex

@inproceedings{BUT23032,
  author="Jan {Pavelka} and Josef {Šikula} and Munecazu {Tacano}",
  title="Non-Poisson Process in RTS-like noise",
  booktitle="Proc. ICNF 2007 AIP Conf. Proc. Vol. 922",
  year="2007",
  pages="111--114",
  publisher="AIP",
  address="Tokio",
  isbn="978-0-7354-0432-8"
}