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ANDREEV, A. GRMELA, L. ŠIKULA, J. ZAJAČEK, J.
Original Title
Analysis of the CdTe Hole Concentration and the Hole Mobility
Type
conference paper
Language
English
Original Abstract
The CdTe radiation detector resistance was measured during long time interval with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. At first the CdTe sample showed metal behavior with every temperature changes. Its resistance increased with the temperature increasing and decreased with the temperature decreasing. Semiconductor properties of the sample began to dominate just after some period of time. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the temperature became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing. Metal behavior of the CdTe with changes of temperature is explained in this paper.
Keywords
Hole concentration; hole mobility; Fermi level
Authors
ANDREEV, A.; GRMELA, L.; ŠIKULA, J.; ZAJAČEK, J.
RIV year
2007
Released
1. 5. 2007
Publisher
Dan Pitica
Location
Cluj-Napoca, Romania
ISBN
978-973-713-174-4
Book
30th International Spring Seminar on Electronics Technology 2007
Edition
MEDIAMIRA
Edition number
1
Pages from
86
Pages to
87
Pages count
2
BibTex
@inproceedings{BUT23288, author="Alexey {Andreev} and Lubomír {Grmela} and Josef {Šikula} and Jiří {Zajaček}", title="Analysis of the CdTe Hole Concentration and the Hole Mobility", booktitle="30th International Spring Seminar on Electronics Technology 2007", year="2007", series="MEDIAMIRA", number="1", pages="86--87", publisher="Dan Pitica", address="Cluj-Napoca, Romania", isbn="978-973-713-174-4" }