Publication detail

Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors

ŠIKULA, J. SEDLÁKOVÁ, V. HLÁVKA, J. HÖSCHEL, P. SITA, Z. ZEDNÍČEK, T. TACANO, M. HASHIGUCHI, S.

Original Title

Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors

Type

conference paper

Language

English

Original Abstract

The aim of this paper is to characterize the active region quality of NbO and Ta capacitors. This method for assesment of defects in active region of NbO and Ta capacitors is based on the evaluation of VA and noise characteristics and theirs temperature dependences.

Keywords

Low frequency noise, NbO, Ta

Authors

ŠIKULA, J.; SEDLÁKOVÁ, V.; HLÁVKA, J.; HÖSCHEL, P.; SITA, Z.; ZEDNÍČEK, T.; TACANO, M.; HASHIGUCHI, S.

RIV year

2005

Released

1. 1. 2005

ISBN

0887-7491

Periodical

Capacitor and Resistor Technology

Year of study

2005

Number

10

State

United States of America

Pages from

210

Pages to

215

Pages count

6

BibTex

@inproceedings{BUT31369,
  author="Josef {Šikula} and Vlasta {Sedláková} and Jan {Hlávka} and Pavel {Höschel} and Zdeněk {Sita} and Tomáš {Zedníček} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors",
  booktitle="25th Capacitor and Resistor Technology Symposium",
  year="2005",
  journal="Capacitor and Resistor Technology",
  volume="2005",
  number="10",
  pages="6",
  issn="0887-7491"
}