Publication detail

Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties

SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.

Original Title

Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties

Type

journal article - other

Language

English

Original Abstract

The deposition of a-Si:H by electron beam evaporation and ion beam hydrogenation is described. The films are characterized by density, hydrogen content and refractive index and by SIMS and AES analysis. The transport properties were determined by conductivity and photoconductivity measurements and using the temperature modulated space charge limited currents method (TM-SCLC)

Key words in English

amorphous silicon,evaporation, ion beam

Authors

SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.

Released

1. 1. 1987

Pages from

1435

BibTex

@article{BUT39723,
  author="Ota {Salyk} and František {Schauer} and Oldřich {Zmeškal} and Karel {Zubík} and Jaroslav {Polcer}",
  title="Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties",
  year="1987",
  volume="97&98"
}