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BENEŠOVÁ, M., DOBIS, P., TOMÁNEK, P., BRÜSTLOVÁ, J.
Original Title
Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures
Type
conference paper
Language
English
Original Abstract
Near-field local Photoluminescence (PL) and photocurrent (PC) spectroscopic techniques are used to study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Nitrogen laser and tuning dye laser. r-SNOM employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. Due to the high lateral resolution of the microscope, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.
Keywords
near field, photoluminescence, induced photocurrent, semiconductor structures, local measurement
Authors
RIV year
2002
Released
26. 5. 2002
Publisher
Tech-Market,Praha
Location
Praha
ISBN
80-86114-46-5
Book
Photonics Prague 2002
Pages from
146
Pages to
Pages count
1
BibTex
@inproceedings{BUT4257, author="Markéta {Benešová} and Pavel {Dobis} and Pavel {Tománek} and Jitka {Brüstlová}", title="Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures", booktitle="Photonics Prague 2002", year="2002", pages="146--146", publisher="Tech-Market,Praha", address="Praha", isbn="80-86114-46-5" }