Publication detail

Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons.

FRANK, L. MIKA, F. HOVORKA, M. VALDAITSEV, D. SCHÖNHENSE, G. MÜLLEROVÁ, I.

Original Title

Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons.

Type

journal article - other

Language

English

Original Abstract

Mechanisms responsible for the contrast between diferently doped areas in semiconductors, whych is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data optained by means of the SEM, SLEEM, PEM are presented.

Key words in English

SLEEM; dopant contrast; SEM; PEEM

Authors

FRANK, L.; MIKA, F.; HOVORKA, M.; VALDAITSEV, D.; SCHÖNHENSE, G.; MÜLLEROVÁ, I.

Released

25. 4. 2007

Pages from

936

Pages to

939

Pages count

4

BibTex

@article{BUT43452,
  author="Luděk {Frank} and Filip {Mika} and Miloš {Hovorka} and D. {Valdaitsev} and Gerd {Schönhense} and Ilona {Müllerová}",
  title="Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons.",
  year="2007",
  volume="48",
  number="5",
  pages="4"
}