Publication detail

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

CHOBOLA, Z. LUŇÁK, M. VANĚK, J. HULICIUS, E.

Original Title

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy

Type

journal article - other

Language

English

Original Abstract

A non-destructive method of relialiblity prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emittint) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

Keywords

Noise, GaSb, Laser

Authors

CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.

RIV year

2010

Released

12. 4. 2010

Publisher

SPIE

Location

Brusel, Belgie

ISBN

0277-786X

Periodical

Proceedings of SPIE

Year of study

2010

Number

7720

State

United States of America

Pages from

77202c-1

Pages to

77202c-7

Pages count

7