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TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., UHDEOVÁ, N.
Original Title
Local photoluminescence measurements of semiconductor surface defects
Type
abstract
Language
English
Original Abstract
The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.
Keywords
photoluminescence, semiconductor, surface deffect, local measurement
Authors
Released
15. 9. 2003
Location
Chernivtsy
Pages from
56
Pages to
Pages count
1
BibTex
@misc{BUT60177, author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Naděžda {Uhdeová}", title="Local photoluminescence measurements of semiconductor surface defects", booktitle="Correlation optics 6", year="2003", series="Neuveden", edition="Neuveden", volume="Neuveden", pages="1", address="Chernivtsy", note="abstract" }