Publication detail

Application of ToF - LEIS for Analysis of Surfaces and Ultra Thin Films

PRŮŠA, S., ŠIKOLA, T., BÁBOR, P.

Original Title

Application of ToF - LEIS for Analysis of Surfaces and Ultra Thin Films

Type

conference paper

Language

English

Original Abstract

Low Energy Ion Scattering (LEIS) belongs to a wide group of surface science analytical techniques. Low detection limit and extreme surface sensitivity are the main advantages of LEIS. Atomic composition of analysed surfaces is determined from the energy distribution of the scattered rare gas ions. Their kinetic energy can be measured by a Time-of-Flight (ToF) spectrometer. Capabilities of the ToF LEIS spectrometer will be demonstrated at analysis of gallium layers evaporated on a SiO2 substrate

Key words in English

ToF, LEIS, sputtering, Ga, SiO2

Authors

PRŮŠA, S., ŠIKOLA, T., BÁBOR, P.

RIV year

2002

Released

15. 11. 2001

Publisher

FEI VUT v Brně

Location

Brno

ISBN

80-214-1992-X

Book

Sborník příspěvků konference Nové trendy ve fyzice

Pages from

404

Pages to

409

Pages count

6

BibTex

@{BUT69628
}