Evaluation of Ni/n-SiC ohmic contacts by current noise measurements

conference paper

English

Ohmic contacts were prepared on the Si surface of the wide band gap semiconductor n-SiC etched by Ar ECR plasma and low-frequency current-noise characteristics of ohmic contacts were investigated.

contacts, noise, n-SiC

TACANO, M., TANUMA, N., YOKOKURA, S., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T.

2001

1. 1. 2001

World Scientific

Gainesville, USA

981-02-4677-3

Proceedings of the 16th Int Conf Noise in Physical Systems and 1/f Fluctuations ICNF 2001

119

122

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