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PAVELKA, J., ŠIKULA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.
Original Title
Low Frequency Noise of Thin Ta2O5 Amorphous Films
Type
conference paper
Language
English
Original Abstract
A low frequency noise and charge carriers transport mechanism analysis have been performed on Ta - Ta2O5 - MnO2 heterostructures of various thickness to determine the current noise sources. The model of MIS structure can be used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temeprature MnO2 - Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated.
Key words in English
low frequency noise, tantalum pentoxide, self-healing, reliability
Authors
RIV year
2001
Released
1. 1. 2001
Publisher
World Scientific
Location
Gainesville, Florida, USA
ISBN
981-02-4677-3
Book
Proceedings of the 16th International Conference Noise in Physical Systems and 1/f Fluctuations ICNF 2001
Pages from
91
Pages to
94
Pages count
4
BibTex
@inproceedings{BUT6854, author="Jan {Pavelka} and Josef {Šikula} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}", title="Low Frequency Noise of Thin Ta2O5 Amorphous Films", booktitle="Proceedings of the 16th International Conference Noise in Physical Systems and 1/f Fluctuations ICNF 2001", year="2001", pages="4", publisher="World Scientific", address="Gainesville, Florida, USA", isbn="981-02-4677-3" }