Publication detail

Mutators for Transforming Nonlinear Resistor Into Memristor

BIOLEK, D. BAJER, J. BIOLKOVÁ, V. KOLKA, Z.

Original Title

Mutators for Transforming Nonlinear Resistor Into Memristor

Type

conference paper

Language

English

Original Abstract

A method of analogue emulation of the memristor with its prescribed charge (qM)-flux (phiM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR)-voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, phiM =kxvR, or phiM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.

Keywords

memristor, constitutive relation, mutator

Authors

BIOLEK, D.; BAJER, J.; BIOLKOVÁ, V.; KOLKA, Z.

RIV year

2011

Released

29. 8. 2011

Publisher

IEEE

Location

Linkoping, Sweden

ISBN

9781457706189

Book

Proceedings of the ECCTD 2011

Pages from

488

Pages to

491

Pages count

4

BibTex

@inproceedings{BUT73106,
  author="Dalibor {Biolek} and Josef {Bajer} and Viera {Biolková} and Zdeněk {Kolka}",
  title="Mutators for Transforming Nonlinear Resistor Into Memristor",
  booktitle="Proceedings of the ECCTD 2011",
  year="2011",
  pages="488--491",
  publisher="IEEE",
  address="Linkoping, Sweden",
  isbn="9781457706189"
}