Publication detail

Influence of laser cutting on p-n junction behavior of solar cell

ŠKARVADA, P. TOMÁNEK, P. GRMELA, L.

Original Title

Influence of laser cutting on p-n junction behavior of solar cell

Type

journal article - other

Language

English

Original Abstract

We present the results of far-field nanoscopic investigation on the sub-micrometer localization and characterization of defects in optoelectronic devices (e.g. monocrystalline silicon solar cell structure) due to the material processing. Solar cells are generally prepared from Si-ingots sawed into thin round wafers by metallic wire. Hence, first defects appear on the sites of metallic precipitates, which reduce quantum efficiency of cells. Second type of defects then originates from further fitting of the round wafer into square cells. The latter can be dimensioning by mechanical sawing or breaking, laser opening or water jet stream cutting. Laser opening, as one of new processing techniques which could diminish the losses in the cells, is a promising tool but not yet well developed. Therefore this paper brings first results of preliminary study concerning the influence of laser cutting on the behavior of semiconductor p-n junction.

Keywords

pn junction, laser cutting, solar cell, efficiency

Authors

ŠKARVADA, P.; TOMÁNEK, P.; GRMELA, L.

RIV year

2011

Released

11. 9. 2011

Publisher

VDI Verlag

Location

Düsseldorf

ISBN

0083-5560

Periodical

VDI Berichte

Year of study

2156

Number

2156

State

Federal Republic of Germany

Pages from

291

Pages to

296

Pages count

6

BibTex

@article{BUT73230,
  author="Pavel {Škarvada} and Pavel {Tománek} and Lubomír {Grmela}",
  title="Influence of laser cutting on p-n junction behavior of solar cell",
  journal="VDI Berichte",
  year="2011",
  volume="2156",
  number="2156",
  pages="291--296",
  issn="0083-5560"
}